Integrated FET Device/Applications Engineer
Job ID 5885
Job Location Durham, NC
Job Category Engineering
Date Posted Jan 23, 2012
Company Information:
Intersil Corporation is a leader in the design and manufacture of high-performance analog, mixed-signal and power management semiconductors. The Company's products address some of the fastest growing markets within the communications, computing, high-end consumer and industrial electronics markets. For more information about Intersil or to find out how to become a member of our winning team, visit the Company's web site and career page at www.intersil.com.
Position Overview:
This position requires a driven, energetic individual with experience in discrete or integrated Power FETs to help architect and characterize FETs for integration in or co-pack with switching regulators ICs used in Telecom/Datacom, Industrial, & Computing systems. Focus is on 12Vin DC-DC applications with currents up to 40A.
Responsibilities:
- work with Process, Package, and Design engineers to develop best in class switching regulator power stages capable of >1MHz operation at >90% efficiencies.
- construct simulation models which include package, PCB, and device parasitics to facilitate making tradeoffs of Vgs, BVdss, Rgate, Rdson, Qg, etc.
- optimize switching and conduction losses and make appropriate selections to best meet specific system requirements.
- optimize Rdson through FET floor planning, package construction, PCB layout, and heat reduction.
- deliver robust solutions by developing inherently rugged FETs capable of withstanding appropriate avalanche and forward currents, or by driving the FETs in a manner that reduces the stresses.
- architect advanced switching techniques including load dependent gate drive shaping, multi-channel length FET arrays to minimize stress vs rspon, efficiency-based deadtime control, low noise switching, GaN gate drivers, etc.
- perform FET device characterization & validation including efficiency, robustness, and thermal analysis.
- perform competitive benchmarking.
- foresee and react to power delivery trends, including high frequency switching and utilization of GaN technology.
Job Requirements:
- BSEE, MSEE, or PhD
The ideal candidate will have 5+ years experience in an applications, design, or device development role with either integrated FET ICs, power MOSFETs, and/or GaN FETs. The candidate should be knowledgeable in DC/DC conversion, modeling of FET and package parasitics, thermal analysis, tradeoffs in efficiency vs. cost, methods to minimize stress on FETs and/or design of avalanche capable FETs, reliability testing of FETs, and failure mechanisms in high current inductive switching. In addition, the successful applicant will have a strong understanding of IC and power device development procedures. The candidate should have good verbal and written communication skills.
Intersil is an Equal Opportunity Employer. For more info, please visit http://www.intersil.com.
